WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Katerangan Umum
MOSFET WST2011 mangrupikeun transistor P-ch anu paling canggih anu sayogi, nunjukkeun dénsitas sél anu teu aya tandingan.Aranjeunna nawiskeun kinerja anu luar biasa, kalayan RDSON rendah sareng muatan gerbang, ngajantenkeun aranjeunna idéal pikeun switching kakuatan sareng aplikasi saklar beban.Salajengna, WST2011 nyumponan standar RoHS sareng Produk Héjo sareng gaduh persetujuan réliabilitas fungsi pinuh.
Fitur
Téknologi Trench canggih ngamungkinkeun dénsitas sél anu langkung luhur, nyababkeun Alat Héjo kalayan Charge Gate Super Low sareng turunna pangaruh CdV/dt anu saé.
Aplikasi
Frékuénsi luhur titik-of-beban switching kakuatan leutik sinkron cocog pikeun pamakéan dina MB / NB / UMPC / VGA, jaringan sistem kakuatan DC-DC, saklar beban, e-rokok, controller, produk digital, panerapan rumah tangga leutik, sarta éléktronika konsumén. .
nomer bahan pakait
ON FDC634P, VISHAY Si3443DDV, NXP PMDT670UPE,
Parameter penting
| Lambang | Parameter | Peunteun | Hijian | |
| 10s | Kaayaan aman | |||
| VDS | Solokan-Sumber tegangan | -20 | V | |
| VGS | Gerbang-Sumber tegangan | ± 12 | V | |
| ID@TA=25 ℃ | Kontinyu solokan Ayeuna, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70 ℃ | Kontinyu solokan Ayeuna, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Pulsed solokan ayeuna2 | -12 | A | |
| PD@TA=25 ℃ | Total Power Dissipation3 | 1.7 | 1.4 | W |
| PD@TA=70 ℃ | Total Power Dissipation3 | 1.2 | 0.9 | W |
| TSTG | Rentang Suhu Panyimpen | -55 nepi ka 150 | ℃ | |
| TJ | Kisaran Suhu Simpang Operasi | -55 nepi ka 150 | ℃ | |
| Lambang | Parameter | Kaayaan | Min. | Tip. | Max. | Unit |
| BVDSS | Solokan-Sumber ngarecahna tegangan | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | Koéfisién Suhu BVDSS | Rujukan kana 25 ℃, ID = -1mA | --- | -0,011 | --- | V/℃ |
| RDS(ON) | Statik solokan-Sumber On-Resistansi2 | VGS=-4.5V, ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Tegangan bangbarung Gerbang | VGS=VDS , ID =-250uA | -0,5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS(th) Koéfisién Suhu | --- | 3.95 | --- | mV/℃ | |
| IDSS | Solokan-Sumber Leakage Ayeuna | VDS=-16V, VGS=0V, TJ=25 ℃ | --- | --- | -1 | uA |
| VDS=-16V, VGS=0V, TJ=55 ℃ | --- | --- | -5 | |||
| IGSS | Gerbang-Sumber Leakage Ayeuna | VGS=±12V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktansi Maju | VDS=-5V , ID=-2A | --- | 8.5 | --- | S |
| Qg | Total muatan Gerbang (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Sumber muatan | --- | 1.1 | 1.7 | ||
| Qgd | Gate-solokan muatan | --- | 1.1 | 2.9 | ||
| Td (dina) | Hurungkeun-Asupkeun Waktos Tunda | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Waktos naék | --- | 9.3 | --- | ||
| Td (pareum) | Pareuman-Pareuman Waktu Tunda | --- | 15.4 | --- | ||
| Tf | Wanci ragrag | --- | 3.6 | --- | ||
| Ciss | Kapasitansi Input | VDS=-15V, VGS=0V, f=1MHz | --- | 750 | --- | pF |
| Coss | Kapasitansi kaluaran | --- | 95 | --- | ||
| Crss | Kapasitansi Transfer Balik | --- | 68 | --- |
