WSR200N08 N-kanal 80V 200A TO-220-3L WINSOK MOSFET
Katerangan Umum
WSR200N08 mangrupikeun lombang N-Ch MOSFET anu paling luhur kalayan kapadetan sél anu ekstrim, anu nyayogikeun RDSON sareng muatan gerbang anu saé pikeun kalolobaan aplikasi konvérsi buck sinkron. WSR200N08 minuhan sarat RoHS sareng Produk Héjo, 100% EAS dijamin kalayan réliabilitas fungsi pinuh disatujuan.
Fitur
Téknologi lombang dénsitas sél tinggi canggih, Super Low Gate Charge, Alus CdV / dt éfék turunna, 100% EAS Dijamin, Héjo Alat Sadia.
Aplikasi
Aplikasi switching, Manajemén Daya pikeun Sistem Inverter, Rokok éléktronik, ngecas nirkabel, motor, BMS, catu daya darurat, drones, médis, ngecas mobil, controller, printer 3D, produk digital, panerapan rumah tangga leutik, éléktronika konsumén, jsb.
nomer bahan pakait
AO AOT480L, ON FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, jsb.
Parameter penting
Karakteristik listrik (TJ=25 ℃, iwal mun disebutkeun béda)
Lambang | Parameter | Peunteun | Hijian |
VDS | Solokan-Sumber tegangan | 80 | V |
VGS | Gerbang-Sumber tegangan | ± 25 | V |
ID@TC=25 ℃ | Arus solokan kontinyu, VGS @ 10V1 | 200 | A |
ID@TC=100 ℃ | Arus solokan kontinyu, VGS @ 10V1 | 144 | A |
IDM | Pulsed Current2,TC=25°C | 790 | A |
EAS | Énergi longsoran, pulsa tunggal, L = 0.5mH | 1496 | mJ |
IAS | Arus longsoran, pulsa tunggal,L=0.5mH | 200 | A |
PD@TC=25 ℃ | Total Power Dissipation4 | 345 | W |
PD@TC = 100 ℃ | Total Power Dissipation4 | 173 | W |
TSTG | Rentang Suhu Panyimpen | -55 nepi ka 175 | ℃ |
TJ | Kisaran Suhu Simpang Operasi | 175 | ℃ |
Lambang | Parameter | kaayaan | Min. | Tip. | Max. | Unit |
BVDSS | Solokan-Sumber ngarecahna tegangan | VGS=0V , ID=250uA | 80 | --- | --- | V |
△BVDSS/△TJ | Koéfisién Suhu BVDSS | Rujukan kana 25 ℃, ID = 1mA | --- | 0.096 | --- | V/℃ |
RDS(ON) | Statik solokan-Sumber On-Resistansi2 | VGS=10V,ID=100A | --- | 2.9 | 3.5 | mΩ |
VGS(th) | Tegangan bangbarung Gerbang | VGS = VDS , ID = 250uA | 2.0 | 3.0 | 4.0 | V |
△VGS(th) | VGS(th) Koéfisién Suhu | --- | -5.5 | --- | mV/℃ | |
IDSS | Solokan-Sumber Leakage Ayeuna | VDS=80V, VGS=0V, TJ=25 ℃ | --- | --- | 1 | uA |
VDS=80V, VGS=0V, TJ=55 ℃ | --- | --- | 10 | |||
IGSS | Gerbang-Sumber Leakage Ayeuna | VGS=±25V, VDS=0V | --- | --- | ± 100 | nA |
Rg | Résistansi Gerbang | VDS=0V, VGS=0V, f=1MHz | --- | 3.2 | --- | Ω |
Qg | Total muatan Gerbang (10V) | VDS=80V, VGS=10V, ID=30A | --- | 197 | --- | nC |
Qgs | Gate-Sumber muatan | --- | 31 | --- | ||
Qgd | Gate-solokan muatan | --- | 75 | --- | ||
Td (dina) | Hurungkeun-Asupkeun Waktos Tunda | VDD=50V, VGS=10V, RG=3Ω, ID=30A | --- | 28 | --- | ns |
Tr | Waktos naék | --- | 18 | --- | ||
Td (pareum) | Pareuman-Pareuman Waktu Tunda | --- | 42 | --- | ||
Tf | Wanci ragrag | --- | 54 | --- | ||
Ciss | Kapasitansi Input | VDS=15V, VGS=0V, f=1MHz | --- | 8154 | --- | pF |
Coss | Kapasitansi kaluaran | --- | 1029 | --- | ||
Crss | Kapasitansi Transfer Balik | --- | 650 | --- |