WSD75100DN56 N-kanal 75V 100A DFN5X6-8 WINSOK MOSFET
Ihtisar produk WINSOK MOSFET
Tegangan WSD75100DN56 MOSFET nyaéta 75V, ayeuna nyaéta 100A, résistansi nyaéta 5.3mΩ, saluranna nyaéta saluran N, sareng pakétna nyaéta DFN5X6-8.
Wewengkon aplikasi WINSOK MOSFET
E-rokok MOSFET, ngecas nirkabel MOSFET, drones MOSFET, perawatan médis MOSFET, carjer MOSFET, controller MOSFET, produk digital MOSFET, parabot rumah tangga leutik MOSFET, éléktronika konsumén MOSFET.
WINSOK MOSFET pakait jeung nomer bahan brand séjén
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3NEG7NSFET IR MOSFET BSC42NE7NS3NEG7NSFET. .
Parameter MOSFET
| Lambang | Parameter | Peunteun | Hijian |
| VDS | Solokan-Sumber tegangan | 75 | V |
| VGS | Gerbang-Source Tegangan | ±25 | V |
| TJ | Suhu simpang maksimum | 150 | °C |
| ID | Rentang Suhu Panyimpen | -55 nepi ka 150 | °C |
| IS | Dioda Arus Maju Kontinyu,TC=25°C | 50 | A |
| ID | Arus solokan kontinyu, VGS= 10 V, TC=25°C | 100 | A |
| Arus solokan kontinyu, VGS= 10 V, TC=100°C | 73 | A | |
| IDM | Pulsed solokan ayeuna, TC=25°C | 400 | A |
| PD | Dissipation kakuatan maksimum, TC=25°C | 155 | W |
| Dissipation kakuatan maksimum, TC=100°C | 62 | W | |
| RθJA | Résistansi Termal-Simpang ka Ambient ,t = 10s ̀ | 20 | °C |
| Résistansi Termal-Simpang ka Ambient, Kaayaan Ajeg | 60 | °C | |
| RqJC | Thermal Résistansi-simpang ka Case | 0.8 | °C |
| IAS | Arus longsoran, pulsa Tunggal, L=0.5mH | 30 | A |
| EAS | Énergi longsoran, pulsa tunggal, L = 0.5mH | 225 | mJ |
| Lambang | Parameter | Kaayaan | Min. | Tip. | Max. | Unit |
| BVDSS | Solokan-Sumber ngarecahna tegangan | VGS= 0V, abdiD= 250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoéfisién Suhu | Rujukan pikeun 25℃, ABDID= 1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Statik solokan-Sumber Dina Résistansi2 | VGS = 10V, kuringD=25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Tegangan bangbarung Gerbang | VGS=VDS, ABDID= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koéfisién Suhu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Solokan-Sumber Leakage Ayeuna | VDS= 48 V, VGS= 0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48 V, VGS= 0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gerbang-Sumber Leakage Ayeuna | VGS=±20 V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktansi Maju | VDS= 5 V, abdiD=20A | --- | 50 | --- | S |
| Rg | Résistansi Gerbang | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Total muatan Gerbang (10V) | VDS= 20 V, VGS= 10 V, abdiD=40A | --- | 65 | 85 | nC |
| Qgs | Gate-Sumber muatan | --- | 20 | --- | ||
| Qgd | Gate-solokan muatan | --- | 17 | --- | ||
| Td (dina) | Hurungkeun-Asupkeun Waktos Tunda | VDD= 30 V, VGEN= 10V, RG=1Ω, ABDID=1A,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Waktos naék | --- | 14 | 26 | ||
| Td (pareum) | Pareuman-Pareuman Waktu Tunda | --- | 60 | 108 | ||
| Tf | Wanci ragrag | --- | 37 | 67 | ||
| Ciss | Kapasitansi Input | VDS= 20 V, VGS=0V, f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Kapasitansi kaluaran | 245 | 395 | 652 | ||
| Crss | Kapasitansi Transfer Balik | 100 | 195 | 250 |
