WSD6070DN56 N-kanal 60V 80A DFN5X6-8 WINSOK MOSFET
Ihtisar produk WINSOK MOSFET
Tegangan WSD6070DN56 MOSFET nyaéta 60V, ayeuna nyaéta 80A, résistansi nyaéta 7.3mΩ, saluranna nyaéta saluran N, sareng pakétna DFN5X6-8.
Wewengkon aplikasi WINSOK MOSFET
E-rokok MOSFET, MOSFET ngecas nirkabel, MOSFET motor, MOSFET drones, MOSFET perawatan médis, MOSFET carjer mobil, MOSFET controller, MOSFET produk digital, MOSFET parabot rumah tangga leutik, MOSFET éléktronika konsumén.
WINSOK MOSFET pakait jeung nomer bahan brand séjén
POTENS Semikonduktor MOSFET PDC696X.
Parameter MOSFET
| Lambang | Parameter | Peunteun | Hijian |
| VDS | Solokan-Sumber tegangan | 60 | V |
| VGS | Gerbang-Source Tegangan | ±20 | V |
| TJ | Suhu simpang maksimum | 150 | °C |
| ID | Rentang Suhu Panyimpen | -55 nepi ka 150 | °C |
| IS | Dioda Arus Maju Kontinyu,TC=25°C | 80 | A |
| ID | Arus solokan kontinyu, VGS= 10 V, TC=25°C | 80 | A |
| Arus solokan kontinyu, VGS= 10 V, TC=100°C | 66 | A | |
| IDM | Pulsed solokan ayeuna, TC=25°C | 300 | A |
| PD | Dissipation kakuatan maksimum, TC=25°C | 150 | W |
| Dissipation kakuatan maksimum, TC=100°C | 75 | W | |
| RθJA | Résistansi Termal-Simpang ka Ambient ,t = 10s ̀ | 50 | °C/W |
| Résistansi Termal-Simpang ka Ambient, Kaayaan Ajeg | 62.5 | °C/W | |
| RqJC | Thermal Résistansi-simpang ka Case | 1 | °C/W |
| IAS | Arus longsoran, pulsa Tunggal, L=0.5mH | 30 | A |
| EAS | Énergi longsoran, pulsa tunggal, L = 0.5mH | 225 | mJ |
| Lambang | Parameter | Kaayaan | Min. | Tip. | Max. | Unit |
| BVDSS | Solokan-Sumber ngarecahna tegangan | VGS= 0V, abdiD= 250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoéfisién Suhu | Rujukan pikeun 25℃, ABDID= 1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Statik solokan-Sumber Dina Résistansi2 | VGS = 10V, kuringD=40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Tegangan bangbarung Gerbang | VGS=VDS, ABDID= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koéfisién Suhu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Solokan-Sumber Leakage Ayeuna | VDS= 48 V, VGS= 0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48 V, VGS= 0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gerbang-Sumber Leakage Ayeuna | VGS=±20 V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktansi Maju | VDS= 5 V, abdiD=20A | --- | 50 | --- | S |
| Rg | Résistansi Gerbang | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Total muatan Gerbang (10V) | VDS= 30 V, VGS= 10 V, abdiD=40A | --- | 48 | --- | nC |
| Qgs | Gate-Sumber muatan | --- | 17 | --- | ||
| Qgd | Gate-solokan muatan | --- | 12 | --- | ||
| Td (dina) | Hurungkeun-Asupkeun Waktos Tunda | VDD= 30 V, VGEN= 10V, RG=1Ω, ABDID=1A,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Waktos naék | --- | 10 | --- | ||
| Td (pareum) | Pareuman-Pareuman Waktu Tunda | --- | 40 | --- | ||
| Tf | Wanci ragrag | --- | 35 | --- | ||
| Ciss | Kapasitansi Input | VDS= 30 V, VGS=0V, f=1MHz | --- | 2680 | --- | pF |
| Coss | Kapasitansi kaluaran | --- | 386 | --- | ||
| Crss | Kapasitansi Transfer Balik | --- | 160 | --- |
