WSD20L120DN56 P-kanal -20V -120A DFN5*6-8 WINSOK MOSFET
Katerangan Umum
WSD20L120DN56 mangrupikeun MOSFET P-Ch anu berkinerja luhur kalayan struktur sél dénsitas luhur, masihan RDSON sareng muatan gerbang anu saé pikeun kalolobaan konverter artos sinkron. WSD20L120DN56 nyumponan 100% syarat EAS pikeun RoHS sareng produk ramah lingkungan, kalayan persetujuan réliabilitas fungsi pinuh.
Fitur
1, Téknologi Trench dénsitas sél luhur canggih
2, Super Low Gate Muatan
3, Alus CdV / dt pangaruh turunna
4, 100% EAS Dijamin 5, Héjo Alat Sadia
Aplikasi
Frékuénsi Tinggi Point-of-Beban Sinkron Buck Parabot Parobah pikeun MB / NB / UMPC / VGA, Jaringan DC-DC Power System, Beban Pindah, E-roko, Wireless carjer, Motors, Drones, Médis, Car Charger, Controller, Produk Digital, Parabot Imah Leutik, Éléktronik Konsumén.
nomer bahan pakait
AOS AON6411,NIKO PK5A7BA
Parameter penting
Lambang | Parameter | Peunteun | Hijian | |
10s | Kaayaan aman | |||
VDS | Solokan-Sumber tegangan | -20 | V | |
VGS | Gerbang-Sumber tegangan | ± 10 | V | |
ID@TC=25 ℃ | Kontinyu solokan Ayeuna, VGS @ -10V1 | -120 | A | |
ID@TC=100 ℃ | Kontinyu solokan Ayeuna, VGS @ -10V1 | -69.5 | A | |
ID@TA=25 ℃ | Kontinyu solokan Ayeuna, VGS @ -10V1 | -25 | -22 | A |
ID@TA=70 ℃ | Kontinyu solokan Ayeuna, VGS @ -10V1 | -24 | -18 | A |
IDM | Pulsed solokan ayeuna2 | -340 | A | |
EAS | Tunggal Pulse Longsor Énergi3 | 300 | mJ | |
IAS | Longsoran Ayeuna | -36 | A | |
PD@TC=25 ℃ | Total Power Dissipation4 | 130 | W | |
PD@TA=25 ℃ | Total Power Dissipation4 | 6.8 | 6.25 | W |
TSTG | Rentang Suhu Panyimpen | -55 nepi ka 150 | ℃ | |
TJ | Kisaran Suhu Simpang Operasi | -55 nepi ka 150 | ℃ |
Lambang | Parameter | kaayaan | Min. | Tip. | Max. | Unit |
BVDSS | Solokan-Sumber ngarecahna tegangan | VGS=0V , ID=-250uA | -20 | --- | --- | V |
△BVDSS/△TJ | Koéfisién Suhu BVDSS | Rujukan kana 25 ℃, ID = -1mA | --- | -0,0212 | --- | V/℃ |
RDS(ON) | Statik solokan-Sumber On-Resistansi2 | VGS=-4.5V, ID=-20A | --- | 2.1 | 2.7 | mΩ |
VGS=-2.5V, ID=-20A | --- | 2.8 | 3.7 | |||
VGS(th) | Tegangan bangbarung Gerbang | VGS=VDS , ID =-250uA | -0.4 | -0.6 | -1.0 | V |
△VGS(th) | VGS(th) Koéfisién Suhu | --- | 4.8 | --- | mV/℃ | |
IDSS | Solokan-Sumber Leakage Ayeuna | VDS=-20V, VGS=0V, TJ=25 ℃ | --- | --- | -1 | uA |
VDS=-20V, VGS=0V, TJ=55 ℃ | --- | --- | -6 | |||
IGSS | Gerbang-Sumber Leakage Ayeuna | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
gfs | Transkonduktansi Maju | VDS=-5V, ID=-20A | --- | 100 | --- | S |
Rg | Résistansi Gerbang | VDS=0V, VGS=0V, f=1MHz | --- | 2 | 5 | Ω |
Qg | Total muatan Gerbang (-4.5V) | VDS=-10V, VGS=-4.5V, ID=-20A | --- | 100 | --- | nC |
Qgs | Gate-Sumber muatan | --- | 21 | --- | ||
Qgd | Gate-solokan muatan | --- | 32 | --- | ||
Td (dina) | Hurungkeun-Asupkeun Waktos Tunda | VDD=-10V, VGEN=-4.5V, RG=3Ω ID=-1A,RL=0.5Ω | --- | 20 | --- | ns |
Tr | Waktos naék | --- | 50 | --- | ||
Td (pareum) | Pareuman-Pareuman Waktu Tunda | --- | 100 | --- | ||
Tf | Wanci ragrag | --- | 40 | --- | ||
Ciss | Kapasitansi Input | VDS=-10V, VGS=0V, f=1MHz | --- | 4950 | --- | pF |
Coss | Kapasitansi kaluaran | --- | 380 | --- | ||
Crss | Kapasitansi Transfer Balik | --- | 290 | --- |