WSD100N06GDN56 N-kanal 60V 100A DFN5X6-8 WINSOK MOSFET
Tinjauan produk WINSOK MOSFET
Tegangan WSD100N06GDN56 MOSFET nyaéta 60V, ayeuna nyaéta 100A, résistansi nyaéta 3mΩ, saluranna nyaéta saluran N, sareng pakétna DFN5X6-8.
Wewengkon aplikasi WINSOK MOSFET
suplai kakuatan médis MOSFET, PDs MOSFET, drones MOSFET, roko éléktronik MOSFET, parabot utama MOSFET, sarta parabot kakuatan MOSFET.
WINSOK MOSFET pakait jeung nomer bahan brand séjén
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semikonduktor MOSFET PDC692X.
Parameter MOSFET
| Lambang | Parameter | Peunteun | Hijian | ||
| VDS | Solokan-Sumber tegangan | 60 | V | ||
| VGS | Gerbang-Sumber tegangan | ±20 | V | ||
| ID1,6 | Kontinyu solokan Ayeuna | TC = 25°C | 100 | A | |
| TC = 100°C | 65 | ||||
| IDM2 | Pulsed solokan Ayeuna | TC = 25°C | 240 | A | |
| PD | Dissipation kakuatan maksimum | TC = 25°C | 83 | W | |
| TC = 100°C | 50 | ||||
| IAS | Arus longsoran, pulsa tunggal | 45 | A | ||
| EAS3 | Single Pulse longsoran énergi | 101 | mJ | ||
| TJ | Suhu simpang maksimum | 150 | ℃ | ||
| TSTG | Rentang Suhu Panyimpen | -55 nepi ka 150 | ℃ | ||
| RθJA1 | Thermal Résistansi simpang ka ambient | Kaayaan aman | 55 | ℃/W | |
| RθJC1 | Thermal Résistansi-simpang ka Case | Kaayaan aman | 1.5 | ℃/W | |
| Lambang | Parameter | kaayaan | Min. | Tip. | Max. | Unit | |
| Statik | |||||||
| V(BR)DSS | Solokan-Sumber ngarecahna tegangan | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Nol Gerbang Tegangan solokan Ayeuna | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ= 85°C | 30 | ||||||
| IGSS | Gerbang Leakage Ayeuna | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| Dina Ciri | |||||||
| VGS(TH) | Tegangan bangbarung Gerbang | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS(on)2 | Solokan-Sumber Dina-nagara Résistansi | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Ngalihkeun | |||||||
| Qg | Total Gate Muatan | VDS = 30 V VGS = 10V ID=20A | 58 | nC | |||
| Qgs | Gate-Aseum Muatan | 16 | nC | ||||
| Qgd | Gate-solokan muatan | 4.0 | nC | ||||
| td (on) | Hurungkeun-on Tunda Time | VGEN=10V VDD = 30 V ID=20A RG=Ω | 18 | ns | |||
| tr | Hurungkeun-on Rise Time | 8 | ns | ||||
| td (pareum) | Pareuman Waktos Tunda | 50 | ns | ||||
| tf | Pareuman Waktos ragrag | 11 | ns | ||||
| Rg | lalawanan Gat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Dinamis | |||||||
| Ciss | Dina Kapasitansi | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Kapasitansi kaluar | 1522 | pF | ||||
| Crss | Kapasitansi Transfer Balik | 22 | pF | ||||
| Karakteristik dioda sumber solokan sareng Peunteun Maksimum | |||||||
| IS1,5 | Kontinyu Sumber Ayeuna | VG=VD=0V , Angkatan Ayeuna | 55 | A | |||
| ISM | Sumber Pulsed Arus3 | 240 | A | ||||
| VSD2 | Tegangan Maju Dioda | ISD = 1A , VGS = 0V | 0.8 | 1.3 | V | ||
| trr | Ngabalikeun Time Pamulihan | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Ngabalikeun Pamulihan Charge | 33 | nC | ||||
